Infrared absorption bands associated with native defects in ZnGeP2
作者： N. C. Giles , Lihua Bai , M. M. Chirila , N. Y. Garces , K. T. Stevens
DOI: 10.1063/1.1572195
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摘要: An optical absorption investigation from 10 to 296 K has been performed on bulk crystals of ZnGeP2 grown by the horizontal-gradient-freeze method. We identify three broad bands in spectral range 1 4 μm that are due native defects. At low temperature, a band peaking near 1.2 and another 2.2 have intensities correlate. The strength these two can be increased or decreased illuminating crystal with selected laser wavelengths. is strongly polarized, its greatest intensity occurring when E parallel c axis crystal. A third band, 2.3 extending 1.5 beyond μm, was observed at during immediately after illumination. Comparison photoinduced changes electron paramagnetic resonance spectra allowed specific defects associated each bands. Both 2...
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