Growth and defect structure of ZnGeP2 crystals

摘要: Abstract A defect structure of nonlinear optical material ZnGeP 2 , grown by the vertical Bridgman technique from melt, was studied. The state-of-the-art results in growth with sufficiently perfect allow one to register presence Borrmann effect and apply X-ray topography method based on this for first time. Microscopy transmission revealed striation, precipitates, forming lineage structures along axis, dislocations unknown linear defects, which should be more elaborately studied future. observed defects are formed because deviation stoichiometry during synthesis unfavorable thermal conditions growth. precipitates only significant deviations stoichiometry. width rocking curves as-grown crystals is 13–35 seconds arc, shows a good structural perfection, spite defects. annealing electron beam irradiation decrease absorption coefficient at 2.06 μm 0.02 cm −1 .