In situ transmission electron microscopy of transistor operation and failure
作者： Baoming Wang , Zahabul Islam , Aman Haque , Kelson Chabak , Michael Snure
关键词:
摘要: Microscopy is typically used as a post-mortem analytical tool in performance and reliability studies on nanoscale materials devices. In this study, we demonstrate real time microscopy of the operation failure AlGaN/GaN high electron mobility transistors inside transmission microscope. Loading until was performed transparent to visualize mechanisms caused by self-heating. At lower drain voltages, thermo-mechanical stresses induce irreversible microstructural deformation, mostly along interface, initiate damage process. higher biasing, self-heating deteriorates gate catastrophic takes place through metal/semiconductor inter-diffusion and/or buffer layer breakdown. This study indicates that current trend recreating events, from nucleation failure, can be replaced situ for quick accurate account mechanisms.
elsevier.com
harvard.edu
sci-hub.se 参考文章(30)
Sukwon Choi, Eric Heller, Donald Dorsey, Ramakrishna Vetury, Samuel Graham, The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors Journal of Applied Physics. ,vol. 114, pp. 164501- ,(2013) , 10.1063/1.4826524
D J Cheney, E A Douglas, L Liu, C F Lo, Y Y Xi, B P Gila, F Ren, David Horton, M E Law, David J Smith, S J Pearton, Reliability studies of AlGaN/GaN high electron mobility transistors Semiconductor Science and Technology. ,vol. 28, pp. 074019- ,(2013) , 10.1088/0268-1242/28/7/074019
J.A. del Alamo, J. Joh, GaN HEMT reliability Microelectronics Reliability. ,vol. 49, pp. 1200- 1206 ,(2009) , 10.1016/J.MICROREL.2009.07.003
Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo, A model for the critical voltage for electrical degradation of GaN high electron mobility transistors Microelectronics Reliability. ,vol. 50, pp. 767- 773 ,(2010) , 10.1016/J.MICROREL.2010.02.015
Jungwoo Joh, J.A. del Alamo, Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors IEEE Electron Device Letters. ,vol. 29, pp. 287- 289 ,(2008) , 10.1109/LED.2008.917815
Shubhajit Mukherjee, Yevgeniy Puzyrev, Jin Chen, Daniel M. Fleetwood, Ronald D. Schrimpf, Sokrates T. Pantelides, Hot-Carrier Degradation in GaN HEMTs Due to Substitutional Iron and Its Complexes IEEE Transactions on Electron Devices. ,vol. 63, pp. 1486- 1494 ,(2016) , 10.1109/TED.2016.2532806
A. Lang, H. Ghassemi, D. Meyer, M. L. Taheri, In-Situ Characterization of the Evolution of Defects in AlGaN\GaN HEMTs in the On-state and Off-state condition Microscopy and Microanalysis. ,vol. 20, pp. 1626- 1627 ,(2014) , 10.1017/S1431927614009866
G.J. Syaranamual, W.A. Sasangka, R.I. Made, S. Arulkumaran, G.I. Ng, S.C. Foo, C.L. Gan, C.V. Thompson, Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation Microelectronics Reliability. ,vol. 64, pp. 589- 593 ,(2016) , 10.1016/J.MICROREL.2016.07.012
Nicholas R. Glavin, Kelson D. Chabak, Eric R. Heller, Elizabeth A. Moore, Timothy A. Prusnick, Benji Maruyama, Dennis E. Walker, Donald L. Dorsey, Qing Paduano, Michael Snure, Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices Advanced Materials. ,vol. 29, pp. 1701838- ,(2017) , 10.1002/ADMA.201701838
Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E Morvan, A Nakajima, E M S Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M Plissonnier, R Reddy, Min Sun, Iain Thayne, A Torres, Nicola Trivellin, V Unni, Michael J Uren, Marleen Van Hove, David J Wallis, J Wang, J Xie, S Yagi, Shu Yang, C Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang, H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H Kawai, Dan Kinzer, Martin Kuball, The 2018 GaN power electronics roadmap Journal of Physics D. ,vol. 51, pp. 163001- ,(2018) , 10.1088/1361-6463/AAAF9D