Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
作者： G.J. Syaranamual , W.A. Sasangka , R.I. Made , S. Arulkumaran , G.I. Ng
DOI: 10.1016/J.MICROREL.2016.07.012
关键词: Scanning electron microscope 、 Transmission electron microscopy 、 Electron 、 Materials science 、 Wide-bandgap semiconductor 、 High-electron-mobility transistor 、 Gallium 、 Nanotechnology 、 Optoelectronics 、 Electron energy loss spectroscopy 、 Joule heating
摘要: Abstract We have investigated the influence of two-dimensional electron gas (2DEG) in AlGaN/GaN high mobility transistors (HEMTs) on their reliability under ON-state conditions. Devices stressed showed a faster decrease maximum drain current (I Dmax ) compared to identical devices OFF-state with comparable electric field and temperature. Scanning microscope (SEM) images pit formation at locations away from gate-edge drain-gate access region. Cross-sectional transmission (TEM) also dark features AlGaN/SiN interface gate edge. Electron energy loss spectroscopy (EELS) analysis indicated presence gallium, aluminum oxygen. These correlate pits observed SEM micrographs. It is proposed that addition causing joule heating, energetic electrons 2D contribute device degradation by promoting electrochemical oxidation AlGaN.
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