Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (100) by MOVPE
作者： D.R. Hang , Mitch M.C. Chou , Liuwen Chang , J.L. Lin , M. Heuken
DOI: 10.1016/J.JCRYSGRO.2009.01.042
关键词:
摘要: We investigate the optical properties of m-plane InGaN/GaN multiple quantum well grown on LiAlO 2 substrate by metal organic vapor phase epitaxy. Polarization-dependent photoluminescence and polarization-dependent excitation measurements have been performed at low temperature to study absorption emission characteristics. The main band possesses large polarization anisotropy which may be attributed anisotropic biaxial strain. found is not influenced polarization-induced electric field from excitation-dependent measurements. From our results, we attribute low-temperature around 3.2 eV interband transition in well. Besides, mechanism associated with subsequent carrier localization. realization good-quality non-polar GaN-based devices can then expected near future.
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