The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

摘要: Very deep treches (up to 200 um) with high aspect ratios 10) in silicon are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and megatively (i.e. reverse) tapered as well fully vertical walls smooth surfaces achieved by controlling the chemistry. A convenient way find processing conditions needed for wall is described: Black Silicon Method. This new procedure checked three different Reactive Ion Etchers (RIE); two parallel plate reactors hexode. The influence of r.f. power, pressure, gas mixture on profile will be shown. Scanning Electron Microscope (SEM) photos included demonstrate Method, gases profile, use this method fabricating Micro Electro Mechanical Systems (MEMS).