Polysilicon Etchback Plasma Process Using HBr , Cl2, and SF 6 Gas Mixtures for Deep‐Trench Isolation
作者： Geun‐Young Yeom , Yoshi Ono , Tad Yamaguchi
DOI: 10.1149/1.2069260
关键词: Trench 、 Surface finish 、 Analytical chemistry 、 Chemistry 、 Plasma 、 Loading factor 、 Smooth surface 、 Ion 、 Deep trench
摘要: … If the degree of planarization is poor, residue from subsequent … thickness left in the trench after end point at the time tn or ta. … plasma etching or reactive ion etching (RIE) to etch tantalum …
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