Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma
作者： Sergi Gomez , Rodolfo Jun Belen , Mark Kiehlbauch , Eray S. Aydil
DOI: 10.1116/1.2049303
关键词: Etching (microfabrication) 、 Atmospheric-pressure plasma 、 Analytical chemistry 、 Dry etching 、 Passivation 、 Reactive-ion etching 、 Silicon 、 Inductively coupled plasma 、 Chemistry 、 Isotropic etching
摘要: We have investigated the etching of high aspect ratio holes (∼4μm deep, ∼0.2μm diameter) in silicon using plasmas maintained mixtures SF6, O2, and HBr or Cl2 gases. The experiments were conducted a low pressure (25mTorr), density, inductively coupled plasma reactor with planar coil. Visualization profiles scanning electron microscopy is used conjunction diagnostics such as optical emission mass spectroscopies to understand key factors that control feature profile shape etch rate. addition SF6∕O2 mixture reduces F-to-O ratio, increases sidewall passivation mask undercut. Addition discharge also decreases but Cl-enhanced F chemical significantly undercut lateral etching. In both SF6∕O2∕HBr SF6∕O2∕Cl2 mixtures, reduction O2 flow rate subsequent increase halogen-to-O eventually results significant etchi...
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