Developing Ni–Al and Ru–Al intermetallic films for use in microelectromechanical systems

摘要: Ordered intermetallic films have a favorable combination of properties such as high strength, metallic electrical conductivity, good oxidation and corrosion resistance, melting temperature thermal stability that make them suitable for microelectromechanical systems (MEMS). One potential drawback to intermetallics is lack ductility at room temperature; however, the B2 compounds NiAl RuAl show some temperature, which has been shown increase grain size decreases. Additionally, fracture toughness both materials higher than those Si SiGe. It also possible deposit these temperatures compatible with complementary metal oxide semiconductor processing. The authors by controlling Ar pressure during cosputtering, thin can be deposited near stresses ranging from compressive tensile, possibly eliminating need annealing. This article examines Ni–...