Two-stage Cu anneal to improve Cu damascene process
作者： Ying-Ho Chen , Syun-Ming Jang
DOI:
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摘要: A method is disclosed to improve the reliability of copper damascene interconnects. This accomplished by performing a two-stage anneal metal; first, after deposition in damascene, and then for second time, removal excess chemical mechanical polishing.
lens.org 参考文章(5)
Nigel Graeme Cave, Terry Grant Sparks, Matthew Thomas Herrick, Joy Kimi Watanabe, Method for forming a semiconductor device ,(1998)
Chiu Ting, Valery Dubin, Method for fabricating copper-aluminum metallization ,(1997)
Dirk D. Brown, Sergey Lopatin, Takeshi Nogami, Method of improving Cu damascene interconnect reliability by laser anneal before barrier polish ,(1999)
Panayotis Constantinou Andricacos, Chao-Kun Hu, Scott Kevin Reynolds, Hariklia Deligianni, James Mckell Edwin Harper, Dale Jonathan Pearson, King-Ning Tu, Cyprian Emeka Uzoh, Method of making copper alloys for chip and package interconnections ,(1997)
Ueno Kazuyoshi, Method for manufacturing a semiconductor device ,(2001)