Conductive structure e.g. metal line, forming method, involves performing heat treatment of locally restricted zone, and scanning locally heated zone to reduce number of grain boundaries in length direction of metal line

摘要: The method involves forming a metal line in dielectric layer of metallization semiconductor device, where the extends along length direction. A heat treatment including heating locally restricted zone is performed to modify crystalline metals lines and enhance purity lines. heated scanned direction reduce number grain boundaries