Laser planarization of nonrefractory metal during integrated circuit fabrication

摘要: Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as xenon chloride excimer laser. The substrate, well any intervening dielectric conducive layers, preheated to preferably one-half the temperature of be planarized, thereby enhancing reflow upon melting. This improves planarization reduces stress in resolidified metal. Laser offers an attractive technique fabricating multilayer interconnect structures, particularly where number ground power planes included. Excellent step coverage via filling is achieved without damaging lower layers interconnect.