Aluminum metallization method
作者： Hirofumi Sumi , Yukiyasu Sugano
DOI:
关键词: Amorphous solid 、 Substrate (electronics) 、 Sheet resistance 、 Salicide 、 Silicon 、 Metallurgy 、 Ion implantation 、 Composite material 、 Layer (electronics) 、 Materials science 、 Grain boundary
摘要: A metallization method in which a fine interconnection hole is filled with an Al-based material and low resistance excellent barrier properties may be achieved simultaneously, proposed. The present invention resides improvement the metal structure. (a) stack of TiSi2 layer Ti layer, formed by modified SALICIDE method, (b) Ti-based rendered amorphous are used. self-aligned manner reacting silicon substrate interposition e.g. thin SiO2 exhibits lower sheet dense film as well barriering properties. stacked on for improving wettability respect to material. N2 ion implantation into polycrystalline TiN superior because crystal grain boundary functioning Al diffusion path destructed. Both these layers exhibit compared TiON used heretofore exhibiting properties, while being material, so that highly reliable contact formed.
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