Fully-integrated switched-capacitor voltage regulator with on-chip current-sensing and workload optimization in 32nm SOI CMOS

作者: Xiaoyang Mi , Debashis Mandal , Visvesh Sathe , Bertan Bakkologlu , Jae-sun Seo

DOI: 10.1109/ISLPED.2015.7273504

关键词:

摘要: Efficient, stable, and fast power delivery against fluctuating workloads have become a critical concern for applications from battery-powered devices to high-performance servers. With high density on-chip capacitors, fully-integrated switched-capacitor (SC) voltage converters provide efficiency down-conversion battery or off-chip regulation modules. However, maintaining such with minimal supply noise across wide range of load currents remains challenging. In this paper, we propose an current sensing technique dynamically modulate both switching frequency switch widths SC converters, enhancing transient response higher currents. conjunction employ low-dropout regulator (LDO) driven by push-pull operational transconductance amplifier (OTA), whose is mirrored sensed overhead. The directly controls the width through voltage-controlled oscillator (VCO) time-to-digital converter, respectively. 32nm SOI CMOS, proposed maintains 77–82% at 0.95V output less than 20mV steady-state ripple 10X 100mA–1A 33mV droop 80mA/ns transition, while providing projected 6W/mm2.

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