Chemically modified ink-jet printed silver electrodes for organic field-effect transistors

作者: Gregory Lewis Whiting , Ana Claudia Arias

DOI: 10.1063/1.3276913

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摘要: Modification of ink-jet printed silver source and drain electrodes for organic field-effect transistors (FETs) with the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was investigated. Solution-based deposition F4TCNQ onto formed using either a nanoparticle-based or metal decomposition ink, lead to greater than tenfold improvement in FET mobility. Using these modified semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene yields devices charge carrier mobility up 0.9 cm2 V−1 s−1 current on/off ratio 106.

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