Studies of Thermally‐Carbonized Porous Silicon Surfaces
作者： J. Salonen , V.-P. Lehto , M. Bj�rkqvist , E. Laine , L. Niinist�
DOI: 10.1002/1521-396X(200011)182:1<123::AID-PSSA123>3.0.CO;2-F
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摘要: Thermally-carbonized porous silicon films have been prepared by exploiting the dissociation of acetylene. Thermoanalytical methods used to study oxidation behavior these in different oxidizing ambients. The results compared other stabilization methods. Due enhanced adsorption and only slightly reduced specific surface area, carbonization was found be an attractive treatment for sensing applications. possible post-treatments are also discussed.
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