Fabrication of CMOS-compatible optical filter arrays using gray-scale lithography

摘要: An integrated optical filter array is demonstrated using simple gray-scale lithography and a subsequent reactive ion etching process. Gray-scale allows three-dimensional structure patterning to form controllable cavity thickness in Fabry–Perot resonance structure. This approach avoids repeated photolithography processes conventional fabrications. The formed by single does not require alignment process of each filter. fabricated with silicon dioxide (SiO2) as layer dielectric mirrors multilayered magnesium fluoride (MgF2) zinc selenide (ZnSe). smallest size 10 µm which can be fitted into the current CMOS-based photodetectors. However, its ultimate will determined minimum resolution lithography. allow an high small directly onto detector or CCD for miniaturized spectrometers.