Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays
作者： Min Wang , Guang Tao Fei , Xiao Guang Zhu , Bing Wu , Ming Guang Kong
DOI: 10.1021/JP809954V
关键词:
摘要: In this paper, single-crystal ZnS column arrays are prepared on the wafer. The then utilized as a transition layer to achieve large-scale homoepitaxial growth of nanowire arrays. Through annealing columns coated with Au films at different temperatures, particle density is controlled, and controlled via vapor−liquid−solid process ranging from 0.33 3.04 wires/μm2. This universal method can be easily applied homoepitaxially grow other materials tune density.
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