PSPICE model for silicon nanowire field‐effect transistor biosensors in impedimetric measurement mode

摘要: In this work, we demonstrate a behavioral PSPICE model for silicon nanowire (SiNW) field-effect transistor (FET) biosensors, which is suitable to simulate frequency domain electrical measurements. The divided into two separated components: an electrochemical part the liquid/solid interface at gate input and FET simulating SiNW characteristics. our study, parameters of are obtained from characterization measurements real devices, fabricated in research group. Measurements were performed with self-developed readout system. can be used investigate effects solution conductivity drain source capacitances sensor. We observed that impedance spectra consist low-pass filter low frequencies resonance higher frequencies. former mainly influenced by capacitance oxide/liquid whereas latter dominated capacitance, case kept constant. addition, based on relationship experimental data, suggest value called representative resistance solution. was compared achieved good agreement between simulation experiments. Our provides clearer view sensors, offers possibility optimize design forms basis include explain sensing events future biomedical assays.