Investigation of ISFET device parameters to optimize for impedimetric sensing of cellular adhesion

摘要: In this study we describe how were able to use an equivalent-electrical circuit for the cell–transistor contact optimize a future chip design better performance in cell–substrate adhesion experiments. From our simulations found that higher capacitances of source and drain lines are shift cell effects more moderate frequencies range up 200 kHz. For larger effects, transconductance value FET devices needs be increased as well. We used these simulation results new generation devices. These successfully fabricated clean room facilities. electronic experiments showed superior compared earlier version. Most importantly, have now almost flat topology enabling single-cell migration HEK293 cells adhered with morphology newly sensor device (scale bar 50 µm)