Electronic monitoring of single cell-substrate adhesion events with quasi-planar field-effect transistors

摘要: Abstract In the present study, we investigate applicability of open-gate silicon field-effect transistors (FET) with a quasi-planar topography for Electrical Cell-substrate Impedance Sensing (ECIS) individual cells. These newly developed chips have thinner gate oxide layer leading to higher transconductance values and therefore stronger electrical coupling between cells transistor gates. Three histologically different cell lines were cultivated FET devices subjected microscopic analysis coverage measurement adhesion. The used technique, called transistor-transfer function (TTF) sensing, is comparable well-established ECIS method. morphologies tested resulted in frequency spectra recorded by presented With our TTF method are able extract cell-related parameters such as seal resistance membrane capacitance from measured using an equivalent circuit model. results study demonstrate reliability planar FETs implicate system be pharmacological platform studying effects chemical therapeutic compounds on variety coming histological backgrounds.