作者: Satoshi Yotsuhashi , Masahiro Deguchi , Hiroshi Hashiba , Yuji Zenitani , Reiko Hinogami
DOI: 10.1063/1.4729298
关键词:
摘要: Light illumination of a gallium nitride photoelectrode creates separate electron-hole pairs that drive water oxidation and CO2 reduction reactions. Here, we show enhanced photocurrent in an AlGaN/GaN device consists unintentionally doped (uid-) AlGaN photoabsorption layer n+-GaN electrical-conduction layer. The production rate formic acid by conversion the uid-AlGaN/n+-GaN is about double uid-GaN/n+-GaN device. This improvement most likely due to effect internal bias uid-AlGaN generated polarization effect, which improves separation.