The Damage Analysis of Nd:YVO4 Crystal Implanted by He+ Ions at Low Energy
作者： YuJie Ma , Fei Lu , Xianbing Ming , Jiaojian Yin , Ming Chen
DOI: 10.1109/SOPO.2012.6270458
关键词:
摘要: We report the damage properties of He+ ions implanted Nd:YVO4 crystal. Implantation was carried out at room temperature by doses 1×1016, 2×1016, and 4×1016 ions/cm2 with energy 200keV. The depth region is about 0.85μm beneath surface. Rutherford backscattering spectrometry (RBS)/channeling technique used to investigate profile samples. Low atomic displacement ratio in as-implanted samples indicates a high irradiative resistance YVO4 crystal dynamic annealing effect implantation process. Post-implant performed for all 200oC 300oC an hour, respectively. height width peak decreased somewhat after 200oC. Repairing re-crystallization damaged lattice achieved 300oC. Photoluminescence ion-implanted were measured on fluorescence Nd3+. sample surface analyzed optical microscopy (OM) force (AFM).
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