Ag2СdSnS4 single crystals as promising materials for optoelectronic
作者： G.E. Davydyuk , G.L. Myronchuk , I.V. Kityk , S.P. Danyl’chuk , V.V. Bozhko
DOI: 10.1016/J.OPTMAT.2011.03.003
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摘要: Abstract Single crystals of the quaternary single Ag2CdSnS4 were grown for first time using horizontal gradient freeze technique. Optical spectral and photoelectric properties obtained investigated. The band gap energy at 77 K according to photoconductivity spectra is 1.94 eV. levels major donor centers in determined. role intrinsic defects observed dependences analyzed. A small maximum low temperature wavelength λm = 640 nm (hν ∼ 1.94 eV); situated fundamental absorption band, which unambiguously corresponds origin photoconductivity. increase extrinsic with λm ∼ 800 nm leads its domination above 240 K. peculiarity can be explained by photoexcitation electrons from valence are empty high temperatures further thermal excitation conduction band.
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