Method for fabricating lead halide sensitized infrared photodiodes

摘要: A process for preparing an infrared sensitive photodiode comprising the ss of (1) forming by vacuum deposition epitaxial layer a semiconductor alloy material which is PbS, PbSe, PbTe, PbSx Se1-x, Te1-x, PbSex Pby Sn1-y S, Se, Te, Sx Sex Pbz Cd1-z or wherein 0