Graded gap semiconductor detector

摘要: A variable temperature method for the preparation of single and multiple taxial layers single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys cadmium sulfide, [Pb 1-w Cd w ] a [S] 1-a where varies between zero fifteen hundredths, inclusive, a=0.500±0.003), deposited upon substrates barium fluoride, BaF 2 , maintained in near thermodynamic equilibrium with concurrently sublimated alloy sources. During preparation, substrate is varied, thereby providing an epilayer graded composition predetermined electrical optical properties along direction growth. This growth technique can be used to produce infrared lenses, narrowband detectors, double heterojunction lasers.