Equilibrium growth technique for preparing PbSx Se1-x epilayers

摘要: A high temperature method for the preparation of single and multiple epitaxial layers single-phase lead sulfide-selenide, [Pb] a [S x Se 1-x ] 1-a wherein varies between one zero, inclusive, a=0.500±0.003, deposited upon substrates barium fluoride, BaF 2 , maintained in near thermodynamic equilibrium with concurrently sublimated alloy chalcogenide sources. During preparation, substrate is exposed to vapor emanating from chimney two-zone, dual-chamber furnace, thereby providing an epilayer uniform, predetermined electrical optical properties.