作者: Armand J. Atanacio , Tadeusz Bak , Janusz Nowotny
DOI: 10.1021/AM301729Z
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摘要: This work reports the effect of indium segregation on surface versus bulk composition (In)-doped TiO(2). The studies are performed using proton-induced X-ray emission (PIXE), secondary-ion mass spectrometry (SIMS), photoelectron spectroscopy (XPS), and Rutherford backscattering (RBS). results XPS analysis indicate that annealing In-doped TiO(2) containing 0.3 atom % In at 1273 K in gas phase controlled oxygen activity [p(O(2)) = 75 kPa 10 Pa] a enrichment 2.95 2.61 In, respectively. obtained data considered terms transport ions from its titanium sites to where these incorporated into interstitial sites. segregation-induced is formation low-dimensional structure sublayer, which charged negatively. latter formed as result strong interactions between vacancies ions, leading defect complexes. this may be used for engineering TiO(2)-based semiconductors with enhanced performance solar energy conversion.