作者: Chun-Cheng Yeh , Silviu Colis , Philippe Fioux , Hsiao-Wen Zan , Dominique Berling
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摘要: Cobalt (II) acetate is mixed with zinc methacrylate (ZnMAA) to form a photopatternable Co-doped oxide precursor. By using deep-UV (DUV) interference lithography, ZnMAA precursor can be patterned as negative tone resist and transformed into ferromagnetic Co:ZnO films after thermal treatment. Moreover, patterns small 300 nm line-width easily obtained. To have an in-depth understanding the effect of DUV-patterning process well annealing on derived from precursor, optical, magnetic, electrical characterizations are performed prepared in different conditions. For film without DUV-patterning, large zero-field-cooling (ZFC)–field-cooling (FC) irreversibility appears superconducting quantum device measurements vacuum annealing, indicating that Co clusters formed inside film. On other hand, no ZFC–FC bifurcation observed for DUV-patterned suggesting uniformity ion distribution ZnO lattice improved by DUV-patterning.