Process for flip-chip bonding a semiconductor die having gold bump electrodes

作者: Paul Poenisch , Trancy Tsao , James A. Matthews

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摘要: A method for flip-chip bonding an integrated circuit die to a substrate. The includes the steps of providing with at least one gold bump, forming barrier layer on bronzing agent layer, and substrate conductive area, which is also covered gold. then aligned compression force applied so as establish contact between area. While maintaining position bump structure alloyed such that area form intermetallic compound, thereby bond functions prevent from diffusing bump.

参考文章(26)
Diana C. Duane, Eric L. Zilley, Robert C. Jordan, Copper/epoxy structures ,(1991)
Randy Clinton Long, James Kenneth Lake, Roger Neil Wild, Stephen Gilbert Gonya, Lead-free, tin, antimony, bismuth, copper solder alloy ,(1994)
Rajan D. Deshmukh, Michael Francis Brady, Solder self-alignment methods ,(1992)
Thomas P. Gall, Anthony P. Ingraham, Low temperature ternary C4 flip chip bonding method ,(1994)
Stephen Gilbert Gonya, Randy Clinton Long, James Kenneth Lake, Roger Neil Wild, Lead free, tin-bismuth solder alloys ,(1994)
Shinji Imatou, Itaru Koyama, Kouhei Wada, Mari Sasaki, Mitsunori Tsuchiya, Noriya Ishida, Shigenori Hayashi, Kazuo Urata, Naoki Hirose, Shunpei Yamazaki, Plasma processing method for improving a package of a semiconductor device ,(1991)
Kim Louise Pickering, David John Warner, David John Pedder, Flip chip solder bond structure for devices with gold based metallization ,(1991)
Stephen Gilbert Gonya, Randy Clinton Long, James Kenneth Lake, Roger Neil Wild, Lead-free, high tin, ternary solder alloy of tin, bismuth, and indium ,(1994)