Spintronic Devices Based on Semiconductors
作者： M. Tanaka , S. Ohya
DOI: 10.1016/B978-0-44-453153-7.00040-7
关键词:
摘要: Recent studies on semiconductor spintronic devices and their functionalities are described with a focus spin transport devices. First, tunneling magnetoresistance in magnetic tunnel junctions (MTJs) of ferromagnetic heterostructures based (GaMn)As is shown. Next, magnetoresistive effects MTJs GaAs:MnAs granular structures, which MnAs nanoscale particles embedded GaAs, presented. Finally, the concept metal-oxide-semiconductor -based transistors design reconfigurable logic circuits explained.
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