Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

摘要: Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well charge transport materials and devices. While metal-based spin-devices, such magnetic-field sensors magnetoresistive random access memory using giant magnetoresistance tunneling magnetoresistance, are already put practical use, semiconductor-based has greater potential for expansion because good compatibility with existing semiconductor technology. Many devices useful functionalities have been proposed explored so far. To realize those functionalities, definitely need appropriate both the properties semiconductors ferromagnets. Ferromagnetic (FMS), alloy containing magnetic atoms Mn Fe, one most promising classes this purpose, thus intensively studied past two decades. Here, review recent progress studies prototypical III-V based FMS, p-type (GaMn)As, its heterostructures focus on transport, Fermi level, bandstructure. Furthermore, cover a new n-type (InFe)As, shows electron-induced ferromagnetism. These FMS having zinc-blende crystal structure show excellent well-developed