Semiconductor lasers and etched-facet integrated devices having h-shaped windows
作者： Ruiyu Fang , Giuliana Morello , Paola-Ida Gotta , Giammarco Rossi , Pietro Della Casa
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摘要: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the and ridge waveguide extending between first second etched end facets. The facet is disposed in window, while window. extends pair of alcoves integrated device which two such structures are provided H-shaped window where adjoin each other. can be fabricated using process that involves mask to form then etching windows.
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