Luminescence of II–VI and III–V nanostructures
作者： K.D. Mynbaev , A.V. Shilyaev , A.A. Semakova , E.V. Bykhanova , N.L. Bazhenov
DOI: 10.1016/J.OPELRE.2017.06.005
关键词:
摘要: Abstract Photoluminescence of HgCdTe epitaxial films and nanostructures electroluminescence InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence compositional fluctuations, which localized charge carriers, was established. A model, described effect fluctuations on rate radiative recombination, shape luminescence spectra position their peaks, shown to describe experimental photoluminescence data quite reasonably. LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission observed. This disappeared with temperature increasing due resonant ‘switch-on’ Auger process involving transition a hole spin-orbit-splitted band. Influence other processes emissive properties also Prospects employing II–VI III–V in devices operating mid-infrared part spectrum are discussed.
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