Lattice Distortion near InGaP Compound Semiconductor Surface due to Surface Treatment of Bias Sputtering
作者： T. Emoto , Y. Yoshida , K. Akimoto , A. Ichimiya , S. Kikuchi
DOI: 10.1016/S0169-4332(03)00480-X
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摘要: Strain fields near InGaP surfaces due to bias sputtering are affected by the voltage used in this surface-cleaning treatment. Measured rocking curves of an InGaP113 reflection under grazing X-ray incidence conditions consisted a main peak and broad sub peaks. The shape peaks was compositional fluctuation subsurface. Changes versus indicate that introduces tensile strain surface. Furthermore, changes supplied excessive generates heavy In conclusion, based on measured fluctuation, generally causes large
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