Strain due to nickel diffusion into hydrogen-terminated Si(1 1 1) surface

摘要: Abstract We studied the affection of thin (i.e., 0.2–0.8 nm) Ni films on hydrogen-terminated Si(1 1 1) substrate surface by using strain-sensitive X-ray diffraction. It was reported that deposition onto Si apparently does not cause film growth, but rather diffuses into crystal, creating an “Ni diffusion layer” up to 0.8 nm thick. Measured rocking curves 1 1 3 reflection and integrated intensities for provide information about evolution strain field introduced near during substrate. Comparing measured calculated indicates compression {1 1 1} spacing occurs gradually thickness 0.6 nm, above this thickness, relaxation occurs. found slope intensity curve versus wavelength correlates surface, in same way shape correlate surface. Dynamical diffraction calculations indicate measurement is useful analysis, because dependence only sensitive fields, also insensitive effect absorption overlayer, which otherwise would deformation curve.