Electron tuned quantum well device

作者: Gregory L. Timp , Alan B. Fowler

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摘要: A quantum well type signal translating device is constructed by providing an appendage in which a reflected wave can be employed to introduce constructive or destructive interference electron conduction at the heterojunction.

参考文章(3)
Horst L. Stormer, Raymond Dingle, Arthur C. Gossard, High mobility multilayered heterojunction devices employing modulated doping ,(1979)
Yuval Gefen, Yoseph Imry, M. Ya. Azbel, Quantum Oscillations and the Aharonov-Bohm Effect for Parallel Resistors Physical Review Letters. ,vol. 52, pp. 129- 132 ,(1984) , 10.1103/PHYSREVLETT.52.129
Mimura Takashi, HIGH ELECTRON MOBILITY TRANSISTOR ,(1983)