Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam Epitaxy

摘要: A new doping technique for phosphorous using a Zn3P2 source has been developed. From an extensive study of the electrical properties ZnSe doped with P, it found that P induces point defects in excess atoms which lowers electron concentration and mobility much more than expected. investigation low-temperature PL spectra, was forms shallow acceptor activation energy 80-92 meV MBE-grown lightly P-doped ZnSe, at same time deep 0.6-0.7 eV heavily ZnSe.