Properties of PLT thin films by thermal decomposition of metallo-organic compounds
作者： Wei Ren , Yun Liu , Jihui Qiu , Liangying Zhang , Xi Yao
DOI: 10.1080/00150199408017620
关键词:
摘要: Abstract The PLT thin films on silicon substrate were prepared by MOD method. relationship of dielectric constants and loss tangent with annealing temperatures La content investigated. Curie decrease linearly at a rate -17°C/mol% increasing content. Ps, Pr Ec the studied P-E hysteresis loops. Large value 19.61μC/cm2 has been achieved in PLTS films, while is 164KV/cm, which much higher than that bulk materials.
sci-hub.se 参考文章(4)
Kenji Iijima, Ryoichi Takayama, Yoshihiro Tomita, Ichiro Ueda, Epitaxial growth and the crystallographic, dielectric, and pyroelectric properties of lanthanum-modified lead titanate thin films Journal of Applied Physics. ,vol. 60, pp. 2914- 2919 ,(1986) , 10.1063/1.337078
Ryoichi Takayama, Yoshihiro Tomita, Kenji Iijima, Ichiro Ueda, Preparation and characteristics of pyroelectric infrared sensors made ofc‐axis oriented La‐modified PbTi03thin films Journal of Applied Physics. ,vol. 61, pp. 411- 415 ,(1987) , 10.1063/1.338839
D. Hennings, K. H. Härdtl, The distribution of vacancies in lanthana-doped lead titanate Physica Status Solidi (a). ,vol. 3, pp. 465- 474 ,(1970) , 10.1002/PSSA.19700030221
Hidetaka Higashino, Takao Kawaguchi, Hideaki Adachi, Toshihiko Makino, Osamu Yamazaki, High Speed Optical TIR Switches Using PLZT Thin-Film Waveguides on Sapphire Japanese Journal of Applied Physics. ,vol. 24, pp. 284- ,(1985) , 10.7567/JJAPS.24S2.284