Atomistic simulation of the vapor deposition of Ni/Cu/Ni multilayers: Incident adatom angle effects

作者: X. W. Zhou , H. N. G. Wadley

DOI: 10.1063/1.371899

关键词:

摘要: Molecular dynamics simulations have been used to explore the effects of incident adatom angle upon atomic scale structure Ni/Cu/Ni multilayers grown by vapor deposition under controlled atom energy conditions. For energies 1 eV or less, increasing increased interfacial roughness, resulted in void formation nickel layer, and intermixing at interfaces between metal layers. The roughness that formed during low impact oblique was significantly reduced substrate rotation growth. However, had no beneficial mixing. use a higher (⩾5 eV/atom) flatter eliminated voids incidence conditions, but it also caused more severe mixing an exchange mechanism. When (thermal) were deposit first few monolayers each new mech...

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