Examples of Microstructure-Related Properties of Gallium Nitride

摘要: The work provides a brief overview and the 1atest experimental results concerning microstructure of gallium nitride. Because importance for optoelectronic electronic technologies, mainly problems related to lattice mismatch between substrates GaN layers are discussed. Three main substrates, sapphire, silicon carbide high-pressure-grown bulk crystals, compared. Mosaicity, thermal strains surface roughnesses grown on those reported. application high-pressure technologies makes it possible use temperatures higher by few hundred degrees with respect atmospheric pressure which decomposition nitride occurs at below 1000°C. Annealing pressures than 10 kbar up 1550°C causes modifications heteroepitaxial sapphire. For example, their mosaicity decreases as observed narrowing X-ray diffraction peaks. implanted recover upon annealing give strong dopant-related luminescence.