Ultraviolet light emitting diodes based on hydrothermal grown crystalline n-ZnO on p-GaN film

摘要: The growth of single crystalline ZnO film on p-GaN using the hydrothermal method is proposed and its application n-ZnO/p-GaN heterojunction light emitting diodes (HJ-LED) demonstrated. effect thermal annealing in nitrogen ambient optical electrical properties hydrothermally grown (HTG-ZnO film) onto a substrate investigated. current-voltage (I–V) curves darkness show that prepared n-HTG-ZnO film/p-GaN HJ with has good rectifying characteristics 150% improvement leakage current at −4 V been achieved for annealing. Strong ultraviolet lights emission from annealed HJ-LED around 375 nm without defect-related emissions visible region are observed electroluminescence (EL) spectra.