Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes

摘要: The investigation explores the fabrication and characteristics of ZnO nanowire (NW)/p-GaN/ZnO NW heterojunction light-emitting diodes (LEDs). Vertically aligned NWs arrays were grown on p-GaN substrate. n-p-n LED was fabricated by combining indium tin oxide/glass substrate with prepared NWs/p-GaN symmetrical rectifying behavior demonstrates that heterostructure herein formed two p-n junction connected back to back. room-temperature electroluminescent emission peak at 415 nm attributed band offset interface between n-ZnO defect-related from GaN. Finally, photograph indicated clearly emitted blue light.