Porous Silicon: Volume-Specific Surface Area Determination from AFM Measurement Data

摘要: Porous silicon layers manufactured by using (100), 1-5 ohm·cm p-type (boron doped) wafer electrochemical etching in HF etanol solution. Photoluminescence (PL) spectra of anodically etched obtained for different conditions studied and surface characteristics are investigated AFM. This study gives a simple way to determine specific porous which plays major role with porosity explaining the blue shift photoluminescence peak. Properties such as area, pore size, size distribution, main properties layer from AFM data important material many processing applications. The "specific area" (Sspecific) generally defined area solid per unit mass material, volume or cross section area. From 3-D reconstructions data, can be estimated directly volume-surface is calculated. For this feature total given m 2 /cm 3 . method not need construct special set up measurement non destructive.