Observation and analysis of breakdown of magnetic tunnel junctions

作者: W Oepts , H.J Verhagen , D.B de Mooij , V Zieren , R Coehoorn

DOI: 10.1016/S0304-8853(98)01048-8

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摘要: At voltages larger than 1.2 V Co/Al2O3/Co(–Fe) magnetic tunnel junctions show almost immediate breakdown, leading to a decrease in (magneto) resistance. The position of the shorts formed is visualized by making use liquid crystal film on top junction. breakdown series nominally identical measured voltage-ramp experiment increased with ramp rate. extrapolated lifetime, at lower voltages, evaluated.

参考文章(4)
J. S. Moodera, Lisa R. Kinder, Terrilyn M. Wong, R. Meservey, Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Physical Review Letters. ,vol. 74, pp. 3273- 3276 ,(1995) , 10.1103/PHYSREVLETT.74.3273
W. Oepts, H. J. Verhagen, W. J. M. de Jonge, R. Coehoorn, Dielectric breakdown of ferromagnetic tunnel junctions Applied Physics Letters. ,vol. 73, pp. 2363- 2365 ,(1998) , 10.1063/1.122462
R. Degraeve, J.L. Ogier, R. Bellens, P.J. Roussel, G. Groeseneken, H.E. Maes, A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown IEEE Transactions on Electron Devices. ,vol. 45, pp. 472- 481 ,(1998) , 10.1109/16.658683