Magnetic random access memory circuit
作者： Hideaki Numata , Kouichi Takeda
DOI:
关键词:
摘要: A magnetic random access memory circuit comprises first and second row decoders receiving a part of given address, column the other plurality pairs sense lines connected between output terminals decoder decoder, each pair being located adjacent to other, word extending intersect so that intersections are in form matrix. array includes cell distributed over matrix, including reference other. Each magneto-resistive element. The at one line lines, respectively. is line, line.
google.de 参考文章(11)
Herbert Goronkin, Saied N. Tehrani, Method of selecting a memory cell in a magnetic random access memory device ,(1996)
Frederick A Perner, Lung T Tran, James A Brug, Equipotential sense methods for resistive cross point memory cell arrays ,(2000)
Akio Koganei, Naoki Nishimura, Memory device utilizing giant magnetoresistance effect ,(1999)
Roy Edwin Scheuerlein, Read circuit for magnetic memory array using magnetic tunnel junction devices ,(1997)
Saied N. Tehrani, Eugene Chen, Mark Durlam, Xiaodong T. Zhu, Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device ,(1996)
Henry L. Stadler, Romney R. Katti, Jiin-Chuan Wu, High speed magneto-resistive random access memory ,(1990)
W Oepts, H.J Verhagen, D.B de Mooij, V Zieren, R Coehoorn, W.J.M de Jonge, Observation and analysis of breakdown of magnetic tunnel junctions Journal of Magnetism and Magnetic Materials. ,vol. 198, pp. 164- 166 ,(1999) , 10.1016/S0304-8853(98)01048-8
J.L. Brown, A.V. Pohm, 1-Mb memory chip using giant magnetoresistive memory cells IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. ,vol. 17, pp. 373- 379 ,(1994) , 10.1109/95.311746
Romney R. Katti, Jiin-Chuan Wu, Henry L. Stadler, Nonvolatile random access memory ,(1992)
Peter K. Naji, High density magnetoresistive random access memory device and operating method thereof ,(1997)