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DOI: 10.1088/0957-4484/11/4/319
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摘要: In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice artificial opal. The opal consisted 220 nm diameter close packed amorphous silica spheres had voids accessible to filling by other substances. were synthesized directly from precursors such as metal salts nitrogen hydrides. composites' structures characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy optical measurements.