Magnetic anisotropy energy in disordered Ge1−xMnxTe
作者： A. Łusakowski , P. Bogusławski , T. Story
DOI: 10.1016/J.JMMM.2015.10.125
关键词:
摘要: Abstract We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge 1 − x Mn Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion rhombohedral crystal lattice. Using DFT method we determine local changes structure due ions substitution for presence very high concentration cation vacancies. calculate effect this structural single ion mechanism show that its contribution is order magnitude smaller as compared originating from spin polarization induced by into neighboring ions. also discuss effects pairs differently allocated The spatial averaging over strongly reduces strength restores global symmetry system.
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