Carrier-induced ferromagnetism in Ge0.92Mn0.08Te epilayers with a Curie temperature up to 190 K
作者： Y. Fukuma , H. Asada , S. Miyawaki , T. Koyanagi , S. Senba
DOI: 10.1063/1.3052081
关键词:
摘要: IV-VI diluted magnetic semiconductor Ge0.92Mn0.08Te epilayers are grown on BaF2 substrates by molecular beam epitaxy. The ferromagnetic behaviors, such as the spontaneous magnetization, coercive field, and Curie temperature TC, altered hole concentration p. In layer with high p, strong anisotropy dependence of magnetization expected for homogeneous ferromagnets observed, implying that long-range ordering is induced holes. maximum TC reaches 190 K 1.57×1021 cm−3.
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