Conduction mechanism of metal-TiO2–Si structures
作者： V.M. Kalygina , I.S. Egorova , I.A. Prudaev , O.P. Tolbanov , V.V. Atuchin
DOI: 10.1016/J.CJPH.2016.08.011
关键词:
摘要: Abstract The conduction model has been proposed for the metal-TiO 2 –Si (MIS) structures. Rutile films have prepared on Si substrates by magnetron sputtering of TiO target and annealing in air at temperatures T = 800 1050 K. current-voltage (CVC) capacitance-voltage characteristics structures measured over range = 283–363 K. At positive potentials gate, conductivity MIS is determined space charge-limited current dielectric layer.
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